 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| 2SD2323 Silicon NPN Triple Diffused Application High voltage switching, igniter Features * Built-in High voltage zener diode (300 V) * High speed switching Outline 2SD2323 Absolute Maximum Ratings (Ta = 25C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Diode current Collector peak current Collector power dissipation Junction temperature Storage temperature Note: 1. Value at TC = 25C. Symbol VCBO VCEO VEBO IC ID* 1 Rating 300 300 7 6 6 10 30 150 -55 to +150 Unit V V V A A A W C C I C(peak) PC * Tj Tstg 1 Electrical Characteristics (Ta = 25C) Item Collector to base breakdown voltage Collector to emitter sustain voltage Emitter to base breakdown voltage Collector cutoff current DC current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Emitter to collector forward voltage Turn on time Storage time Fall time Symbol V(BR)CBO VCEO(SUS) V(BR)EBO I CEO hFE VCE(sat) VBE(sat) VECF t on t stg tf Min 300 300 7 -- 500 -- -- -- -- -- -- Typ -- -- -- -- -- -- -- -- 1.2 8.0 8.0 Max 420 -- -- 100 -- 1.5 2.0 3.5 -- -- -- V V V s Unit V V V A Test conditions I C = 0.1 mA, IE = 0 I C = 3 A, RBE = , L = 10 mH I E = 50 mA, IC = 0 VCE = 300 V, RBE = VCE = 2 V, IC = 4 A I C = 4 A, IB = 40 mA I C = 4 A, IB = 40 mA IF = 6 A I C = 4 A, VCC = 20 V I B1 = -IB2 = 40 mA 2 2SD2323 3 2SD2323 4 2SD2323 When using this document, keep the following in mind: 1. This document may, wholly or partially, be subject to change without notice. 2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without Hitachi's permission. 3. Hitachi will not be held responsible for any damage to the user that may result from accidents or any other reasons during operation of the user's unit according to this document. 4. Circuitry and other examples described herein are meant merely to indicate the characteristics and performance of Hitachi's semiconductor products. Hitachi assumes no responsibility for any intellectual property claims or other problems that may result from applications based on the examples described herein. 5. No license is granted by implication or otherwise under any patents or other rights of any third party or Hitachi, Ltd. 6. MEDICAL APPLICATIONS: Hitachi's products are not authorized for use in MEDICAL APPLICATIONS without the written consent of the appropriate officer of Hitachi's sales company. Such use includes, but is not limited to, use in life support systems. Buyers of Hitachi's products are requested to notify the relevant Hitachi sales offices when planning to use the products in MEDICAL APPLICATIONS. 5 |
Price & Availability of 2SD2323
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |